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Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, Woo Young | - |
| dc.contributor.author | Han, Min Su | - |
| dc.contributor.author | Han, Boram | - |
| dc.contributor.author | Seo, Dongsun | - |
| dc.contributor.author | Cho, Il Hwan | - |
| dc.date.accessioned | 2022-10-26T07:21:47Z | - |
| dc.date.available | 2022-10-26T07:21:47Z | - |
| dc.date.created | 2022-10-20 | - |
| dc.date.issued | 2013-05 | - |
| dc.identifier.citation | IEICE Transactions on Electronics, Vol.E96.C No.5, pp.714-717 | - |
| dc.identifier.issn | 0916-8524 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/186809 | - |
| dc.description.abstract | A modified modeling of residue effect on nano-electromechanical nonvolatile memory (NEMory) is presented for considering wet etching process. The effect of a residue under the cantilever is investigated for the optimization. The feasibility of the proposed model is investigated by finite element analysis simulations. | - |
| dc.language | 영어 | - |
| dc.publisher | Oxford University Press | - |
| dc.title | Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1587/transele.E96.C.714 | - |
| dc.citation.journaltitle | IEICE Transactions on Electronics | - |
| dc.identifier.wosid | 000319085700020 | - |
| dc.identifier.scopusid | 2-s2.0-84878155853 | - |
| dc.citation.endpage | 717 | - |
| dc.citation.number | 5 | - |
| dc.citation.startpage | 714 | - |
| dc.citation.volume | E96.C | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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