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Dual-dielectric-constant spacer hetero-gate-dielectric tunneling field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Lee, Gibong | - |
dc.contributor.author | Jang, Jung-Shik | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:48Z | - |
dc.date.available | 2022-10-26T07:21:48Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Semiconductor Science and Technology, Vol.28 No.5, p. 052001 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186810 | - |
dc.description.abstract | Hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) with dual-dielectric-constant (k) spacers have been fabricated and characterized. They have a heterogeneous gate dielectric layer which consists of high-k material (HfO2) and SiO2 at the source and drain side, respectively. The dual-k spacer has an inner high-k and outer SiO2 spacer. The fabricated dual-k-spacer HG TFETs show higher on/off current ratio, on-current and better subthreshold slope than control TFETs which use only SiO2 for a gate dielectric layer and spacer. Moreover, the impact of the length of high-k material inserted under the gate (Lhigh-k) has been investigated. It turns out that the optimization of Lhigh-k can significantly improve performance and power efficiency. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Physics Publishing | - |
dc.title | Dual-dielectric-constant spacer hetero-gate-dielectric tunneling field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1088/0268-1242/28/5/052001 | - |
dc.citation.journaltitle | Semiconductor Science and Technology | - |
dc.identifier.wosid | 000317746100001 | - |
dc.identifier.scopusid | 2-s2.0-84876534380 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 052001 | - |
dc.citation.volume | 28 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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