Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)

Abstract

We have investigated the low-power circuit applicability of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs). Based on the device-level comparison of HG, SiO2-only and high-k-only TFETs, their circuit performance and energy consumption have been discussed. It has been shown that HG TFETs can deliver similar to 14400x higher performance than the SiO2-only TFETs and similar to 17x higher performance than the high-k-only TFETs due to its higher on current and lower capacitance at the same static power, same power supply. It has been revealed that HG TFETs have better voltage scalability than the others. It is because HG TFETs dissipate only similar to 8% of energy consumption of SiO2-only TFETs and similar to 17% of that of high-k-only TFETs under the same performance condition.