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Synaptic Tunnel Field-Effect Transistors for Extremely-Low-Power Operation

DC Field Value Language
dc.contributor.authorLee, Jang Woo-
dc.contributor.authorWoo, Jae Seung-
dc.contributor.authorChoi, Woo Young-
dc.date.accessioned2022-10-26T07:21:51Z-
dc.date.available2022-10-26T07:21:51Z-
dc.date.created2022-07-27-
dc.date.issued2022-07-
dc.identifier.citationIEEE Electron Device Letters, Vol.43 No.7, pp.1149-1152-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://hdl.handle.net/10371/186814-
dc.description.abstract© 1980-2012 IEEE.A synaptic cell composed of two tunnel field-effect transistors (TFETs) which is capable of XNOR operation for binary neural networks has been experimentally demonstrated. Our proposed synaptic TFETs feature lower current during inference and higher programming efficiency during weight transfer than conventional synaptic transistors. Moreover, the fabricated synaptic TFET arrays satisfy the neurobiological energy requirement (~10 fJ per synaptic event) and low bit-error rate of 6.7×10-7%.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleSynaptic Tunnel Field-Effect Transistors for Extremely-Low-Power Operation-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2022.3179173-
dc.citation.journaltitleIEEE Electron Device Letters-
dc.identifier.wosid000838380800046-
dc.identifier.scopusid2-s2.0-85131757040-
dc.citation.endpage1152-
dc.citation.number7-
dc.citation.startpage1149-
dc.citation.volume43-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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