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Synaptic Tunnel Field-Effect Transistors for Extremely-Low-Power Operation
DC Field | Value | Language |
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dc.contributor.author | Lee, Jang Woo | - |
dc.contributor.author | Woo, Jae Seung | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:51Z | - |
dc.date.available | 2022-10-26T07:21:51Z | - |
dc.date.created | 2022-07-27 | - |
dc.date.issued | 2022-07 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.43 No.7, pp.1149-1152 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186814 | - |
dc.description.abstract | © 1980-2012 IEEE.A synaptic cell composed of two tunnel field-effect transistors (TFETs) which is capable of XNOR operation for binary neural networks has been experimentally demonstrated. Our proposed synaptic TFETs feature lower current during inference and higher programming efficiency during weight transfer than conventional synaptic transistors. Moreover, the fabricated synaptic TFET arrays satisfy the neurobiological energy requirement (~10 fJ per synaptic event) and low bit-error rate of 6.7×10-7%. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Synaptic Tunnel Field-Effect Transistors for Extremely-Low-Power Operation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2022.3179173 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000838380800046 | - |
dc.identifier.scopusid | 2-s2.0-85131757040 | - |
dc.citation.endpage | 1152 | - |
dc.citation.number | 7 | - |
dc.citation.startpage | 1149 | - |
dc.citation.volume | 43 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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