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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jae Seong | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:22:52Z | - |
dc.date.available | 2022-10-26T07:22:52Z | - |
dc.date.created | 2022-10-19 | - |
dc.date.issued | 2021-10 | - |
dc.identifier.citation | IEEE Transactions on Electron Devices, Vol.68 No.10, pp.4903-4909 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186902 | - |
dc.description.abstract | A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/TED.2021.3106886 | - |
dc.citation.journaltitle | IEEE Transactions on Electron Devices | - |
dc.identifier.wosid | 000697824500018 | - |
dc.identifier.scopusid | 2-s2.0-85114733865 | - |
dc.citation.endpage | 4909 | - |
dc.citation.number | 10 | - |
dc.citation.startpage | 4903 | - |
dc.citation.volume | 68 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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