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Nanoelectromechanical-Switch-Based Binary Content-Addressable Memory (NEMBCAM)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jae Seong | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:22:53Z | - |
dc.date.available | 2022-10-26T07:22:53Z | - |
dc.date.created | 2022-10-19 | - |
dc.date.issued | 2021-05 | - |
dc.identifier.citation | IEEE Access, Vol.9, pp.70214-70220 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186904 | - |
dc.description.abstract | This paper proposes a novel nanoelectromechanical-switch-based binary content-addressable memory (NEMBCAM) for the first time. A nanoelectromechanical (NEM) memory switch serves as both a nonvolatile memory and a switchable current path in an NEMBCAM unit cell. Owing to monolithic three-dimensional integration, NEMBCAM achieves a smaller unit cell area in comparison with conventional complementary metal-oxide-semiconductor-only binary content-addressable memory. Small unit cell area results in reduced match line (ML) capacitance, which lowers search energy consumption. Furthermore, a shorter search delay is achieved owing to the near-perfect on/off characteristic of the NEM memory switch. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Nanoelectromechanical-Switch-Based Binary Content-Addressable Memory (NEMBCAM) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/ACCESS.2021.3078531 | - |
dc.citation.journaltitle | IEEE Access | - |
dc.identifier.wosid | 000652044200001 | - |
dc.identifier.scopusid | 2-s2.0-85105867921 | - |
dc.citation.endpage | 70220 | - |
dc.citation.startpage | 70214 | - |
dc.citation.volume | 9 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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