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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:22:59Z | - |
dc.date.available | 2022-10-26T07:22:59Z | - |
dc.date.created | 2022-10-19 | - |
dc.date.issued | 2020-05 | - |
dc.identifier.citation | Micromachines, Vol.11 No.6, p. 543 | - |
dc.identifier.issn | 2072-666X | - |
dc.identifier.uri | https://hdl.handle.net/10371/186912 | - |
dc.description.abstract | This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on-off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant. | - |
dc.language | 영어 | - |
dc.publisher | Multidisciplinary Digital Publishing Institute (MDPI) | - |
dc.title | Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/mi11060543 | - |
dc.citation.journaltitle | Micromachines | - |
dc.identifier.wosid | 000551635700001 | - |
dc.identifier.scopusid | 2-s2.0-85087075345 | - |
dc.citation.number | 6 | - |
dc.citation.startpage | 543 | - |
dc.citation.volume | 11 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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