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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage

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dc.contributor.authorChoi, Woo Young-
dc.date.accessioned2022-10-26T07:22:59Z-
dc.date.available2022-10-26T07:22:59Z-
dc.date.created2022-10-19-
dc.date.issued2020-05-
dc.identifier.citationMicromachines, Vol.11 No.6, p. 543-
dc.identifier.issn2072-666X-
dc.identifier.urihttps://hdl.handle.net/10371/186912-
dc.description.abstractThis study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on-off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.-
dc.language영어-
dc.publisherMultidisciplinary Digital Publishing Institute (MDPI)-
dc.titleNegative Capacitance Vacuum Channel Transistors for Low Operating Voltage-
dc.typeArticle-
dc.identifier.doi10.3390/mi11060543-
dc.citation.journaltitleMicromachines-
dc.identifier.wosid000551635700001-
dc.identifier.scopusid2-s2.0-85087075345-
dc.citation.number6-
dc.citation.startpage543-
dc.citation.volume11-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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