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Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Jang Woo | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:23:00Z | - |
dc.date.available | 2022-10-26T07:23:00Z | - |
dc.date.created | 2022-10-19 | - |
dc.date.issued | 2020-04 | - |
dc.identifier.citation | IEEE Access, Vol.8, pp.67617-67624 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186913 | - |
dc.description.abstract | A gate-normal hetero-gate-dielectric (GHG) tunnel field-effect transistor (TFET) and the guidelines for its design are proposed. The introduction of the HG structure into gate-normal TFETs improves device performance by lowering subthreshold swing (SS). It is confirmed that the SS of the proposed GHG TFET is successfully enhanced by suppressing the gate-diagonal tunneling current. Compared with conventional gate-normal TFETs, the final optimized GHG TFET improves the values of the point SS, effective SS, and on-current by 71 & x0025;, 15 & x0025;, and 2.4 times, respectively. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Design Guidelines for Gate-Normal Hetero-Gate-Dielectric (GHG) Tunnel Field-Effect Transistors (TFETs) | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/ACCESS.2020.2985125 | - |
dc.citation.journaltitle | IEEE Access | - |
dc.identifier.wosid | 000527416700004 | - |
dc.identifier.scopusid | 2-s2.0-85084001143 | - |
dc.citation.endpage | 67624 | - |
dc.citation.startpage | 67617 | - |
dc.citation.volume | 8 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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