Type II band alignment of NiO/α-Ga2O3 for annealing temperatures up to 600 °C

Abstract

There is increasing interest in the alpha polytype of Ga2O3 because of its even larger bandgap than the more studied beta polytype, but in common with the latter, there is no viable p-type doping technology. One option is to use p-type oxides to realize heterojunctions and NiO is one of the candidate oxides. The band alignment of sputtered NiO on alpha-Ga2O3 remains type II, staggered gap for annealing temperatures up to 600 & DEG;C, showing that this is a viable approach for hole injection in power electronic devices based on the alpha polytype of Ga2O3. The magnitude of both the conduction and valence band offsets increases with temperature up to 500 & DEG;C, but then is stable to 600 & DEG;C. For the as-deposited NiO/alpha-Ga2O3 heterojunction, & UDelta;E-V = -2.8 and & UDelta;E-C = 1.6 eV, while after 600 & DEG;C annealing the corresponding values are & UDelta;E-V = -4.4 and & UDelta;E-C = 3.02 eV. These values are 1-2 eV larger than for the NiO/beta-Ga2O3 heterojunction.