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Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer
DC Field | Value | Language |
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dc.contributor.author | Lee, Taesoo | - |
dc.contributor.author | Hahm, Donghyo | - |
dc.contributor.author | Kim, Kyunghwan | - |
dc.contributor.author | Bae, Wan Ki | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Kwak, Jeonghun | - |
dc.date.accessioned | 2023-05-08T00:34:39Z | - |
dc.date.available | 2023-05-08T00:34:39Z | - |
dc.date.created | 2020-04-14 | - |
dc.date.created | 2020-04-14 | - |
dc.date.issued | 2019-12 | - |
dc.identifier.citation | Small, Vol.15 No.50, p. 1905162 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://hdl.handle.net/10371/191904 | - |
dc.description.abstract | InP quantum dots (QDs) based light-emitting diodes (QLEDs) are considered as one of the most promising candidates as a substitute for the environmentally toxic Cd-based QLEDs for future displays. However, the device architecture of InP QLEDs is almost the same as the Cd-based QLEDs even though the properties of Cd-based and InP-based QDs are quite different in their energy levels and shapes. Thus, it is highly required to develop a proper device structure for InP-based QLEDs to improve the efficiency and stability. In this work, efficient, bright, and stable InP/ZnSeS QLEDs based on an inverted top emission QLED (ITQLED) structure by newly introducing a "hole-suppressing interlayer" are demonstrated. The green-emitting ITQLEDs with the hole-suppressing interlayer exhibit a maximum current efficiency of 15.1-21.6 cd A(-1) and the maximum luminance of 17 400-38 800 cd m(-2), which outperform the recently reported InP-based QLEDs. The operational lifetime is also increased when the hole-suppressing interlayer is adopted. These superb QLED performances originate not only from the enhanced light-outcoupling by the top emission structure but also from the improved electron-hole balance by introducing a hole-suppressing interlayer which can control the hole injection into QDs. | - |
dc.language | 영어 | - |
dc.publisher | Wiley - V C H Verlag GmbbH & Co. | - |
dc.title | Highly Efficient and Bright Inverted Top-Emitting InP Quantum Dot Light-Emitting Diodes Introducing a Hole-Suppressing Interlayer | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/smll.201905162 | - |
dc.citation.journaltitle | Small | - |
dc.identifier.wosid | 000496543900001 | - |
dc.identifier.scopusid | 2-s2.0-85075199818 | - |
dc.citation.number | 50 | - |
dc.citation.startpage | 1905162 | - |
dc.citation.volume | 15 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Changhee | - |
dc.contributor.affiliatedAuthor | Kwak, Jeonghun | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | efficiency | - |
dc.subject.keywordAuthor | hole suppressing interlayer | - |
dc.subject.keywordAuthor | indium phosphide | - |
dc.subject.keywordAuthor | quantum dot-based light emitting diodes (QLEDs) | - |
dc.subject.keywordAuthor | top emitting structure | - |
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