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Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shin, Hyeonwoo | - |
dc.contributor.author | Roh, Jeongkyun | - |
dc.contributor.author | Song, Jiyoung | - |
dc.contributor.author | Roh, Heebum | - |
dc.contributor.author | Kong, Chan-Mo | - |
dc.contributor.author | Lee, Taesoo | - |
dc.contributor.author | Park, Gunbaek | - |
dc.contributor.author | An, Kunsik | - |
dc.contributor.author | Kim, Jun Young | - |
dc.contributor.author | Kim, Hyoseok | - |
dc.contributor.author | Kwak, Jeonghun | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Kim, Hyeok | - |
dc.date.accessioned | 2023-05-08T00:35:28Z | - |
dc.date.available | 2023-05-08T00:35:28Z | - |
dc.date.created | 2020-04-22 | - |
dc.date.issued | 2019-04 | - |
dc.identifier.citation | Advanced Materials Interfaces, Vol.6 No.8, p. 1801731 | - |
dc.identifier.issn | 2196-7350 | - |
dc.identifier.uri | https://hdl.handle.net/10371/191921 | - |
dc.description.abstract | In this work, operationally and mechanically stable organic field-effect transistors (OFETs) are demonstrated on aramid fiber-based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography-inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub-nanometer-scale surface roughness. Owing to the sub-nanometer-scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field-effect mobility (0.25 cm(2) V-1 s(-1)) with a high current on-to-off ratio (>10(7)), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias-stress-induced threshold voltage shift ( increment V-TH approximate to 4.27 V under an excessive gate bias stress of 1.7 MV cm(-1) for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field-effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications. | - |
dc.language | 영어 | - |
dc.publisher | John Wiley and Sons Ltd | - |
dc.title | Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/admi.201801731 | - |
dc.citation.journaltitle | Advanced Materials Interfaces | - |
dc.identifier.wosid | 000471704200010 | - |
dc.identifier.scopusid | 2-s2.0-85061344360 | - |
dc.citation.number | 8 | - |
dc.citation.startpage | 1801731 | - |
dc.citation.volume | 6 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kwak, Jeonghun | - |
dc.contributor.affiliatedAuthor | Lee, Changhee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordAuthor | aramid paper | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | organic field-effect transistors | - |
dc.subject.keywordAuthor | paper electronics | - |
dc.subject.keywordAuthor | surface planarization | - |
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