Publications
Detailed Information
Analysis of failure of C-V characteristics of MIS structure with SiO2 passivation layer deposited on InSb substrate via Raman spectroscopy
Cited 0 time in
Web of Science
Cited 0 time in Scopus
- Authors
- Issue Date
- 2014-04
- Publisher
- Materials Research Society
- Citation
- Materials Research Society Symposium - Proceedings, Vol.1670, p. 111283
- Abstract
- The effect of interfacial phases on the electrical properties of Au/Ti/SiO2/InSb metal-insulator (oxide)-semiconductor (MIS or MOS) structures was investigated by capacitance-voltage (C-V) measurements. With increasing the deposition temperature of silicon oxide from 100 to 350°C using PECVD, the change in the interfacial phases between SiO2 and InSb were analyzed by resonant Raman spectroscopy to verify the relation between the breakdown of C-V characteristics and the change of interfacial phases. The shape of C-V characteristics was dramatically changed when the deposition temperature was above 300°C. The C-V measurements and Raman spectra represented that elemental Sb accumulation resulted from the chemical reaction of Sb oxide with InSb substrate was responsible for the failure in the C-V characteristics of MIS structure. Copyright © 2014 Materials Research Society.
- ISSN
- 0272-9172
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.