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Dense Assembly of Finely Patterned Semiconducting Single-Walled Carbon Nanotubes via a Selective Transfer Method of Nanotube-Attracting Layers
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Boik | - |
dc.contributor.author | Jang, Jongsu | - |
dc.contributor.author | Kim, Hyeonggyu | - |
dc.contributor.author | Seo, Jiseok | - |
dc.contributor.author | Yoo, Hyunjun | - |
dc.contributor.author | Kim, Taehoon | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.date.accessioned | 2023-10-11T01:52:02Z | - |
dc.date.available | 2023-10-11T01:52:02Z | - |
dc.date.created | 2020-10-06 | - |
dc.date.created | 2020-10-06 | - |
dc.date.created | 2020-10-06 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | ACS Applied Materials and Interfaces, Vol.12 No.34, pp.38441-38450 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://hdl.handle.net/10371/195715 | - |
dc.description.abstract | Development of technology for assembled single-walled carbon nanotube (SWCNT) film with the fine resolution is an essential technique for penetrating practical electronic applications. A promising approach is the assembly method by adding a chemical-functionalizing substrate to enhance affinity between the SWCNTs and the substrate. However, the various introduced approaches for solution-based assembly have suffered from low SWCNT deposition selectivity or low SWCNT deposition density. Herein, we demonstrated a facile method for selectively assembling semiconducting SWCNT network on the substrate. The substrate was prepared via a transfer printing of a poly-L-lysine (PLL)-coated poly(dimethylsiloxane) (PDMS) stamp. The thermal-assisted transfer method enabled an ultrafine PLL pattern (<= 4 mu m) and a high transfer yield (96.5%) by only one-time stamping without a change of the SWCNT-attracting nature. So, semiconducting SWCNTs were deposited on the patterned regions selectively and precisely. The benefit of the patterned semiconducting SWCNTs was lowering leakage current and turn-on voltage in the transfer characteristics by suppressing attachment of unnecessary SWCNT network. They showed excellent electrical performance, a log(10) (I-on/I-off) ratio of 4.76, and an average value of linear field-effect mobility of 7.56 cm(2)/(V s). This research provides a simple but high-quality assembling technique of semiconducting SWCNTs, thereby improving the feasibility of solution-processed SWCNT-TFTs. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Dense Assembly of Finely Patterned Semiconducting Single-Walled Carbon Nanotubes via a Selective Transfer Method of Nanotube-Attracting Layers | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.0c04612 | - |
dc.citation.journaltitle | ACS Applied Materials and Interfaces | - |
dc.identifier.wosid | 000566662000066 | - |
dc.identifier.scopusid | 2-s2.0-85090078390 | - |
dc.citation.endpage | 38450 | - |
dc.citation.number | 34 | - |
dc.citation.startpage | 38441 | - |
dc.citation.volume | 12 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Yongtaek | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SURFACE MODIFICATION | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
dc.subject.keywordPlus | NETWORKS | - |
dc.subject.keywordPlus | POLY(DIMETHYLSILOXANE) | - |
dc.subject.keywordPlus | SPECTROSCOPY | - |
dc.subject.keywordPlus | IRRADIATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | GLYCOL) | - |
dc.subject.keywordPlus | ROBUST | - |
dc.subject.keywordAuthor | ultrafine resolution | - |
dc.subject.keywordAuthor | uniform assembly | - |
dc.subject.keywordAuthor | transfer PLL film | - |
dc.subject.keywordAuthor | SWCNT film | - |
dc.subject.keywordAuthor | SWCNT-TFTs | - |
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