Publications
Detailed Information
Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Sungsoo | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.contributor.author | Hong, Yongtaek | - |
dc.date.accessioned | 2023-10-11T01:52:27Z | - |
dc.date.available | 2023-10-11T01:52:27Z | - |
dc.date.created | 2020-10-27 | - |
dc.date.created | 2020-10-27 | - |
dc.date.issued | 2020-08 | - |
dc.identifier.citation | Journal of the Korean Physical Society, Vol.77 No.4, pp.277-281 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://hdl.handle.net/10371/195724 | - |
dc.description.abstract | In this study, we report a substantial improvement in the long-term stability of low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) with a tandem gate insulator composed of silicon dioxide (SiO2) deposited by using atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD). Negative-bias temperature instability (NBTI) tests showed that threshold-voltage (Delta V-th) shifts were significantly smaller than when only a plasma-enhanced chemical vapor deposition (PECVD) structure was used. We believe that the unique stoichiometric characteristics and the reduction in the interfacial trap density (D-it) produced by the SiO(2)gate insulator that had been fabricated using ALD enhanced the long-term stability of the LTPS TFTs. These results suggest a tandem structure gate insulator with high-quality ALD-based SiO(2)thin film can provide an important improvement in the characteristics of the p-channel LTPS TFTs required for advanced active matrix organic light-emitting diodes (AMOLEDs) applications. | - |
dc.language | 영어 | - |
dc.publisher | 한국물리학회 | - |
dc.title | Improved Long-Term Stability of Low-Temperature Polysilicon Thin-Film Transistors by Using a Tandem Gate Insulator with an Atomic Layer of Deposited Silicon Dioxide | - |
dc.type | Article | - |
dc.identifier.doi | 10.3938/jkps.77.277 | - |
dc.citation.journaltitle | Journal of the Korean Physical Society | - |
dc.identifier.wosid | 000563637300002 | - |
dc.identifier.scopusid | 2-s2.0-85089976930 | - |
dc.citation.endpage | 281 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 277 | - |
dc.citation.volume | 77 | - |
dc.identifier.kciid | ART002617413 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Yongtaek | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SI TFTS | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | STATES | - |
dc.subject.keywordAuthor | LTPS TFT | - |
dc.subject.keywordAuthor | ELA | - |
dc.subject.keywordAuthor | Poly-Si | - |
dc.subject.keywordAuthor | ALD | - |
dc.subject.keywordAuthor | NBTI | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.