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High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, S. -Y. | - |
dc.contributor.author | Kim, K. | - |
dc.contributor.author | Hwang, Y. H. | - |
dc.contributor.author | Park, J. | - |
dc.contributor.author | Jang, J. | - |
dc.contributor.author | Nam, Y. | - |
dc.contributor.author | Kang, Y. | - |
dc.contributor.author | Kim, M. | - |
dc.contributor.author | Park, H. J. | - |
dc.contributor.author | Lee, Z. | - |
dc.contributor.author | Choi, J. | - |
dc.contributor.author | Kim, Y. | - |
dc.contributor.author | Jeong, S. | - |
dc.contributor.author | Bae, B. -S. | - |
dc.contributor.author | Park, J. -U. | - |
dc.date.accessioned | 2024-04-25T04:11:55Z | - |
dc.date.available | 2024-04-25T04:11:55Z | - |
dc.date.created | 2024-04-25 | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | NANOSCALE, Vol.8 No.39, pp.17113-17121 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.uri | https://hdl.handle.net/10371/199427 | - |
dc.description.abstract | As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 mu m) and superb performance, including high mobility (similar to 230 cm(2) V-1 s(-1)). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 degrees C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics. | - |
dc.language | 영어 | - |
dc.publisher | ROYAL SOC CHEMISTRY | - |
dc.title | High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance | - |
dc.type | Article | - |
dc.identifier.doi | 10.1039/c6nr05577j | - |
dc.citation.journaltitle | NANOSCALE | - |
dc.identifier.wosid | 000386074900007 | - |
dc.identifier.scopusid | 2-s2.0-84991043191 | - |
dc.citation.endpage | 17121 | - |
dc.citation.number | 39 | - |
dc.citation.startpage | 17113 | - |
dc.citation.volume | 8 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, J. | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | THIN-FILM-TRANSISTORS | - |
dc.subject.keywordPlus | FIELD-EFFECT MOBILITY | - |
dc.subject.keywordPlus | GALLIUM-ZINC OXIDE | - |
dc.subject.keywordPlus | GA-ZN-O | - |
dc.subject.keywordPlus | LOW-TEMPERATURE | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | INTEGRATED-CIRCUITS | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | NANOSCALE | - |
dc.subject.keywordPlus | DEVICE | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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