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Lensless Short-Range Reflection-Mode Imaging at 275 GHz Using CMOS Concurrent Transceivers

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dc.contributor.authorByreddy, Pranith R.-
dc.contributor.authorSosa, Walter E.-
dc.contributor.authorZhu, Yukun-
dc.contributor.authorChen, Zhiyu-
dc.contributor.authorPouya, Behnam-
dc.contributor.authorChoi, Wooyeol-
dc.contributor.authorKenneth, K. O.-
dc.date.accessioned2024-04-30T01:19:44Z-
dc.date.available2024-04-30T01:19:44Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2023-02-
dc.identifier.citationIEEE Sensors Letters, Vol.7 No.2-
dc.identifier.issn2475-1472-
dc.identifier.urihttps://hdl.handle.net/10371/199937-
dc.description.abstractLensless short-range reflection-mode imaging through a cardboard cover is demonstrated at 275 GHz using a pair of concurrent complimentary metal-oxide-semiconductor transceiver pixels separated by & SIM;5 mm on a printed circuit board (PCB). This is the first such demonstration at frequencies above 100 GHz. The separation between the imaged object and pixels is similar to 1 cm and the operation at 275 GHz allows the lateral resolution to be reduced to similar to 2 mm due to a smaller wavelength. A concurrent transceiver pixel incorporating a transmitter with an effective isotropic radiated power of -18.9 dBm and a receiver with a double sideband noise figure of similar to 51 dB in an area of 0.45 x 0.49 mm(2) is used. The reflected signals from a target must be greater than the transmitted signal directly coupled to the receiver, and this isolation between the transmitter and receiver limits the imager range and contrast. Full-wave electromagnetic simulations (ANSYS high-frequency structure simulator (HFSS)) of a PCB with a transmit and receive rectangular patch antenna with a separation of similar to 5 mm show that similar to 65 dB isolation at 275 GHz can be achieved. This should be sufficient to image a target with a radar cross section of 2 mm x 2 mm with a reflection coefficient of 0.1 that is 1-cm away. This work points to a path for incorporation of millimeter and submillimeter wave imaging in a handheld device.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleLensless Short-Range Reflection-Mode Imaging at 275 GHz Using CMOS Concurrent Transceivers-
dc.typeArticle-
dc.identifier.doi10.1109/LSENS.2023.3239804-
dc.citation.journaltitleIEEE Sensors Letters-
dc.identifier.wosid000934990800002-
dc.identifier.scopusid2-s2.0-85147282435-
dc.citation.number2-
dc.citation.volume7-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Wooyeol-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusARRAY-
dc.subject.keywordAuthorImaging-
dc.subject.keywordAuthorTransceivers-
dc.subject.keywordAuthorReceivers-
dc.subject.keywordAuthorOscillators-
dc.subject.keywordAuthorVoltage-controlled oscillators-
dc.subject.keywordAuthorTransmitters-
dc.subject.keywordAuthorSystem-on-chip-
dc.subject.keywordAuthorMicrowave-
dc.subject.keywordAuthormillimeter wave sensors-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorconcurrent transceiver-
dc.subject.keywordAuthorimaging-
dc.subject.keywordAuthorlensless-
dc.subject.keywordAuthormillimeter wave-
dc.subject.keywordAuthorreflection-mode-
dc.subject.keywordAuthorshort-range-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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