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A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Mehraban, Haniye | - |
| dc.contributor.author | Park, Wan-Soo | - |
| dc.contributor.author | Jo, Hyeon-Bin | - |
| dc.contributor.author | Choi, Su-Min | - |
| dc.contributor.author | Kim, Dae-Hyun | - |
| dc.contributor.author | Kim, Sang-Kuk | - |
| dc.contributor.author | Yun, Jacob | - |
| dc.contributor.author | Kim, Ted | - |
| dc.contributor.author | Choi, Wooyeol | - |
| dc.date.accessioned | 2024-04-30T01:19:57Z | - |
| dc.date.available | 2024-04-30T01:19:57Z | - |
| dc.date.created | 2024-04-26 | - |
| dc.date.created | 2024-04-26 | - |
| dc.date.issued | 2023 | - |
| dc.identifier.citation | 2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS | - |
| dc.identifier.issn | 2638-3845 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/199940 | - |
| dc.description.abstract | This paper presents a W-band low noise amplifier (LNA) in 50-nm InP high-electron-mobility-transistor (HEMT) technology. The LNA employs a threestage design in common-source (CS) configuration using 2x20 mu m transistors, coplanar waveguides (CPW), metal-insulator-metal capacitors (MIM), and NiCr-based thin film resistors (TFR). The first two stages employ inductive source feedback for concurrent noise and gain matching and in-band stability. The 3rd stage utilizes resistive parallel feedback. This design shows a simulated noise figure of 1.4 dB with a measured associated gain of 14 dB at 94 GHz while consuming a DC power of 75 mW. | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/WMCS58822.2023.10194275 | - |
| dc.citation.journaltitle | 2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS | - |
| dc.identifier.wosid | 001048479200019 | - |
| dc.identifier.scopusid | 2-s2.0-85168769103 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Wooyeol | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
| dc.subject.keywordAuthor | Coplanar waveguide (CPW) | - |
| dc.subject.keywordAuthor | high-electron-mobility transistor (HEMT) | - |
| dc.subject.keywordAuthor | indium phosphide (InP) | - |
| dc.subject.keywordAuthor | low noise amplifier (LNA) | - |
| dc.subject.keywordAuthor | W-band | - |
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Related Researcher
- Choi, Wooyeol최우열
- 조교수
- College of Engineering
- Department of Electrical and Computer Engineering
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