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300-GHz 2nd-Order Subharmonic Upconversion Mixer Using Symmetric MOS Varactors in 65-nm CMOS

DC Field Value Language
dc.contributor.authorChen, Zhiyu-
dc.contributor.authorChoi, Wooyeol-
dc.contributor.authorKenneth, K. O.-
dc.date.accessioned2024-04-30T01:21:19Z-
dc.date.available2024-04-30T01:21:19Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2020-
dc.identifier.citationIEEE Solid-State Circuits Letters, Vol.3, pp.538-541-
dc.identifier.issn2573-9603-
dc.identifier.urihttps://hdl.handle.net/10371/199966-
dc.description.abstractA 2nd-order subharmonic upconversion mixer with an intermediate frequency of 150 GHz and radio frequency (RF) of 290 GHz that employs accumulation mode MOS symmetric varactors is demonstrated in 65-nm complementary metal-oxide-semiconductor. A transformer-based hybrid is utilized to improve port isolation. The mixer achieves the maximum conversion gain of -16 dB including the losses (similar to 2 dB total) of input and output baluns added for measurements. The local oscillator power at 70 GHz was 11.5 dBm and the 27-GHz 3-dB bandwidth spans between 284 and 311 GHz. The -11.6-dBm output 1-dB compression point from a single mixer is the highest among that for the 2nd-order subharmonic mixers with RF of similar to 300 GHz fabricated in any process technologies.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.title300-GHz 2nd-Order Subharmonic Upconversion Mixer Using Symmetric MOS Varactors in 65-nm CMOS-
dc.typeArticle-
dc.identifier.doi10.1109/LSSC.2020.3036804-
dc.citation.journaltitleIEEE Solid-State Circuits Letters-
dc.identifier.wosid000723378200136-
dc.identifier.scopusid2-s2.0-85096371857-
dc.citation.endpage541-
dc.citation.startpage538-
dc.citation.volume3-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Wooyeol-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusNONLINEAR ELEMENTS-
dc.subject.keywordPlusGENERAL PROPERTIES-
dc.subject.keywordAuthorComplementary metal-oxide-semiconductor (CMOS)-
dc.subject.keywordAuthorreactive mixer-
dc.subject.keywordAuthorsubharmonic-
dc.subject.keywordAuthorSVAR-
dc.subject.keywordAuthorupconversion-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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