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610-GHz Fourth Harmonic Signal Reactively Generated in a CMOS Voltage Controlled Oscillator Using Differentially Pumped Varactors

Cited 9 time in Web of Science Cited 8 time in Scopus
Authors

Chen, Zhe; Chen, Zhiyu; Choi, Wooyeol; Kenneth, K. O.

Issue Date
2020
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Solid-State Circuits Letters, Vol.3, pp.46-49
Abstract
A fourth harmonic signal reactively generated in a voltage controlled oscillator (VCO) using differentially pumped varactors is used to demonstrate a compact 610-GHz source in 65-nm CMOS. The nonlinear C-V characteristics of accumulation mode varactor pair are used to generate the harmonic power. The circuit also utilizes a technique to boost the varactor Q and dynamic cut-off frequency to increase the harmonic power. The source delivers a peak radiating power of -25.2 dBm, with a frequency tuning range of 604.5-618.6 GHz (2.3%), a 3-dB tuning bandwidth of 607.1-614.3 GHz (1.2%), and a dc-THz efficiency of 0.01% (0.013% excluding the power consumption in the current source). The chip core area is 0.62 mm x 0.39 mm excluding the area for bond pads.
ISSN
2573-9603
URI
https://hdl.handle.net/10371/199967
DOI
https://doi.org/10.1109/LSSC.2020.2978150
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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