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Terahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz

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dc.contributor.authorZhong, Qian-
dc.contributor.authorChoi, Wooyeol-
dc.contributor.authorKenneth, K. O.-
dc.date.accessioned2024-04-30T01:21:53Z-
dc.date.available2024-04-30T01:21:53Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2018-
dc.identifier.citation2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, Vol.2018-June, pp.211-212-
dc.identifier.urihttps://hdl.handle.net/10371/199977-
dc.description.abstractA 560-GHz RF front-end employing MOS symmetric varactor (SVAR) subharmonic mixers achieves a minimum SSB noise figure (NF) of 35 dB in the 4th order subharmonic mixing (SHM) mode which is 5-7 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for 6th order SHM at RF=810 GHz and 60-dB SSB NF for 10th order SHM at RF=1.2 THz. Use of SVAR's in a mixer is the first and the 1.2-THz RF is the highest among the silicon coherent RF front-ends.-
dc.language영어-
dc.publisherIEEE-
dc.titleTerahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz-
dc.typeArticle-
dc.identifier.doi10.1109/VLSIC.2018.8502297-
dc.citation.journaltitle2018 IEEE SYMPOSIUM ON VLSI CIRCUITS-
dc.identifier.wosid000853983300083-
dc.identifier.scopusid2-s2.0-85056833873-
dc.citation.endpage212-
dc.citation.startpage211-
dc.citation.volume2018-June-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Wooyeol-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorTerahertz-
dc.subject.keywordAuthorCMOS-
dc.subject.keywordAuthorreactive mixer-
dc.subject.keywordAuthorand SVAR-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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