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Terahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Zhong, Qian | - |
dc.contributor.author | Choi, Wooyeol | - |
dc.contributor.author | Kenneth, K. O. | - |
dc.date.accessioned | 2024-04-30T01:21:53Z | - |
dc.date.available | 2024-04-30T01:21:53Z | - |
dc.date.created | 2024-04-26 | - |
dc.date.created | 2024-04-26 | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | 2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, Vol.2018-June, pp.211-212 | - |
dc.identifier.uri | https://hdl.handle.net/10371/199977 | - |
dc.description.abstract | A 560-GHz RF front-end employing MOS symmetric varactor (SVAR) subharmonic mixers achieves a minimum SSB noise figure (NF) of 35 dB in the 4th order subharmonic mixing (SHM) mode which is 5-7 dB lower than that of SiGe HBT mixers. The front-end fabricated in 65-nm CMOS also achieves 45-dB SSB NF for 6th order SHM at RF=810 GHz and 60-dB SSB NF for 10th order SHM at RF=1.2 THz. Use of SVAR's in a mixer is the first and the 1.2-THz RF is the highest among the silicon coherent RF front-ends. | - |
dc.language | 영어 | - |
dc.publisher | IEEE | - |
dc.title | Terahertz RF Front-End Employing Even-Order Subharmonic MOS Symmetric Varactor Mixers in 65-nm CMOS for Hydration Measurements at 560 GHz | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/VLSIC.2018.8502297 | - |
dc.citation.journaltitle | 2018 IEEE SYMPOSIUM ON VLSI CIRCUITS | - |
dc.identifier.wosid | 000853983300083 | - |
dc.identifier.scopusid | 2-s2.0-85056833873 | - |
dc.citation.endpage | 212 | - |
dc.citation.startpage | 211 | - |
dc.citation.volume | 2018-June | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Wooyeol | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordAuthor | Terahertz | - |
dc.subject.keywordAuthor | CMOS | - |
dc.subject.keywordAuthor | reactive mixer | - |
dc.subject.keywordAuthor | and SVAR | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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