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A new compact high-efficiency mmWave power amplifier in 65 nm CMOS process

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dc.contributor.authorXi, T.-
dc.contributor.authorHuang, S.-
dc.contributor.authorGuo, S.-
dc.contributor.authorGui, P.-
dc.contributor.authorZhang, J.-
dc.contributor.authorChoi, W.-
dc.contributor.authorHuang, D.-
dc.contributor.authorKenneth, K.O.-
dc.contributor.authorFan, Y.-
dc.date.accessioned2024-04-30T01:22:34Z-
dc.date.available2024-04-30T01:22:34Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2015-
dc.identifier.citation2015 IEEE MTT-S International Microwave Symposium, IMS 2015-
dc.identifier.issn0149-645X-
dc.identifier.urihttps://hdl.handle.net/10371/199990-
dc.description.abstractThis paper presents a new design technique for high-efficiency CMOS mmWave power amplifier (PA). The proposed PA adopts NMOS capacitors connected at the gates of the transistors of the last amplifying stage to compensate gate capacitance variation over large signal swing, improving the linearity and the power efficiency. Implemented in 65 nm CMOS process, the presented PA consists of two differential stages, uses baluns, transformers and inductors to realize the input, output, and inter-stage power matching, and achieves a peak PAE of 24.2%, a 6 dB back-off PAE of 10.5% from 3 dB gain compression, a maximum gain of 17 dB, and a 3-dB bandwidth from 68 to 78 GHz. © 2015 IEEE.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleA new compact high-efficiency mmWave power amplifier in 65 nm CMOS process-
dc.typeArticle-
dc.identifier.doi10.1109/MWSYM.2015.7167051-
dc.citation.journaltitle2015 IEEE MTT-S International Microwave Symposium, IMS 2015-
dc.identifier.wosid000370722900348-
dc.identifier.scopusid2-s2.0-84946092820-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, W.-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorPower amplifier (PA)-
dc.subject.keywordAuthorhigh efficiency-
dc.subject.keywordAuthormmWave-
dc.subject.keywordAuthorNMOS capacitors-
dc.subject.keywordAuthorcapacitance linearization-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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