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High-Efficiency Power Amplifier Using an Active Second-Harmonic Injection Technique Under Optimized Third-Harmonic Termination

Cited 27 time in Web of Science Cited 31 time in Scopus
Authors

Seo, Mincheol; Lee, Hwiseob; Gu, Jehyeon; Kim, Hyungchul; Ham, Junghyun; Choi, Wooyeol; Yun, Yanghun; Kenneth, K. O.; Yang, Youngoo

Issue Date
2014-08
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Transactions on Circuits and Systems II: Express Briefs, Vol.61 No.8, pp.549-553
Abstract
This brief presents an active second-harmonic injection technique to improve the efficiency and bandwidth for high-efficiency power amplifiers (PAs). An optimum third-harmonic termination condition was examined for higher efficiency after the second-harmonic injection using a multiharmonic load-pull simulation. It was determined that the optimum third-harmonic termination is the same as that of the inverse class-F PA. Based on this result, a high-efficiency PA with an optimized third-harmonic termination for the second-harmonic injection was designed for a center frequency of 1 GHz as a main amplifier. The overall system requires an auxiliary second-harmonic amplifier and a diplexer between the main and auxiliary PAs. The PA with an optimized third-harmonic termination for the second-harmonic injection was implemented using a 10-W GaN high-electron-mobility transistor for both the main and auxiliary power stages. Compared with the PA without second-harmonic injection, the bandwidth with a power-added efficiency of more than 80% is extended from 60 (960-1020 MHz) to 180 MHz (880-1060 MHz) after the second-harmonic injection.
ISSN
1549-7747
URI
https://hdl.handle.net/10371/199994
DOI
https://doi.org/10.1109/TCSII.2014.2327382
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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