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54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB Gain using Transformer Feedback Gm-boosting Technique

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dc.contributor.authorGuo, Shita-
dc.contributor.authorXi, Tianzuo-
dc.contributor.authorGui, Ping-
dc.contributor.authorZhang, Jing-
dc.contributor.authorChoi, Wooyeol-
dc.contributor.authorKenneth, K. O.-
dc.contributor.authorFan, Yanli-
dc.contributor.authorHuang, Daquan-
dc.contributor.authorGu, Richard-
dc.contributor.authorMorgan, Mark-
dc.date.accessioned2024-04-30T01:22:56Z-
dc.date.available2024-04-30T01:22:56Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2014-
dc.identifier.citation2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), pp.185-188-
dc.identifier.urihttps://hdl.handle.net/10371/199997-
dc.description.abstractThis paper presents a novel topology of low-noise amplifier (LNA) with noise reduction and gain improvement. A transformer feedback gm-boosting technique is proposed in a single-ended cascode LNA to reduce the noise figure (NF) and improve the gain simultaneously. Two 54 GHz single-ended cascode LNAs, with transformer and transmission-line for matching, respectively, are demonstrated to verify this technique. Fabricated in a 65 nm CMOS process, the transformer-based (TF-based) LNA exhibits a minimum noise figure (NF) of 3.6 dB at 53.5 GHz and a highest power gain of 28.2 dB at 54 GHz in measurement. To our best knowledge, this LNA has the best noise figure and power gain among all the published V-band CMOS LNAs. The transmission-line-based (TL-based) LNA exhibits a minimum noise figure of 3.8 dB at 53.9 GHz and a highest power gain of 25.4 dB at 54.2 GHz in measurement. Both the LNAs consume 18 mA from a power supply of 1.1 V.-
dc.language영어-
dc.publisherIEEE-
dc.title54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB Gain using Transformer Feedback Gm-boosting Technique-
dc.typeArticle-
dc.identifier.doi10.1109/ASSCC.2014.7008891-
dc.citation.journaltitle2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)-
dc.identifier.wosid000380484900047-
dc.identifier.scopusid2-s2.0-84922567356-
dc.citation.endpage188-
dc.citation.startpage185-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Wooyeol-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorLow-noise amplifier (LNA)-
dc.subject.keywordAuthornoise figure (NF)-
dc.subject.keywordAuthorpower gain-
dc.subject.keywordAuthortransformer-
dc.subject.keywordAuthortransmission-line-
dc.subject.keywordAuthorV-band-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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