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W-band divide-by-3 frequency divider using 0.1 mu m InAlAs/InGaAs metamorphic HEMT technology

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dc.contributor.authorJeong, J-
dc.contributor.authorKim, S-
dc.contributor.authorChoi, W-
dc.contributor.authorNoh, H-
dc.contributor.authorLee, K-
dc.contributor.authorSeo, KS-
dc.contributor.authorKwon, Y-
dc.date.accessioned2024-04-30T01:24:38Z-
dc.date.available2024-04-30T01:24:38Z-
dc.date.created2024-04-26-
dc.date.created2024-04-26-
dc.date.issued2005-09-
dc.identifier.citationElectronics Letters, Vol.41 No.18, pp.1005-1007-
dc.identifier.issn0013-5194-
dc.identifier.urihttps://hdl.handle.net/10371/200029-
dc.description.abstractA W-band divide-by-3 frequency divider with wide bandwidth and low power dissipation is presented using harmonic injection-locking technique. A cascode FET is employed for a self-oscillating second-harmonic mixer which is injection-locked by third-harmonic input to obtain the division order of three. The fabricated frequency divider using 0.1 mu m GaAs metamorphic HEMT technology shows superior performance such as large bandwidth of 6.1 GHz around 83.1 GHz (7.3%) under small DC power consumption of 12 mW-
dc.language영어-
dc.publisherInstitute of Electrical Engineers-
dc.titleW-band divide-by-3 frequency divider using 0.1 mu m InAlAs/InGaAs metamorphic HEMT technology-
dc.typeArticle-
dc.identifier.doi10.1049/el:20052191-
dc.citation.journaltitleElectronics Letters-
dc.identifier.wosid000232336800012-
dc.identifier.scopusid2-s2.0-25444456427-
dc.citation.endpage1007-
dc.citation.number18-
dc.citation.startpage1005-
dc.citation.volume41-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, W-
dc.contributor.affiliatedAuthorSeo, KS-
dc.contributor.affiliatedAuthorKwon, Y-
dc.type.docTypeArticle-
dc.description.journalClass1-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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