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Self-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shim, Dongha | - |
dc.contributor.author | Choi, Wooyeol | - |
dc.contributor.author | Lee, Jong-Wook | - |
dc.contributor.author | Kenneth, K. O. | - |
dc.date.accessioned | 2024-04-30T06:13:29Z | - |
dc.date.available | 2024-04-30T06:13:29Z | - |
dc.date.created | 2024-04-26 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.citation | IEEE Microwave and Wireless Components Letters, Vol.27 No.12, pp.1110-1112 | - |
dc.identifier.issn | 1531-1309 | - |
dc.identifier.uri | https://hdl.handle.net/10371/200046 | - |
dc.description.abstract | A 157-GHz complementary antiparallel diode pair (CAPDP) frequency tripler using a combination of self-dynamic and static dc biasing to enhance output power and conversion efficiency is demonstrated in 130-nm complementary metal-oxide-semiconductor. The self-dynamic biasing expands the off-zone of CAPDP to reduce the output power roll-off at high input levels. A negative static dc bias tunes the off-zone to enhance the nonlinearity to increase the output power at low input levels. The frequency tripler generates -18.6 dBm maximum output power (P-OUT) at 157.5 GHz at the input power (P-IN) of 13.4 dBm. At P-IN of 11 dBm, P-OUT is 2.7-dB higher or conversion loss (CL) is 2.7-dB lower than the tripler with a cathode-tied CAPDP. At P-IN greater than 13.4 dBm, P-OUT should be more than 4.3-dB higher and CL is more than 4.3-dB lower. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Self-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LMWC.2017.2757845 | - |
dc.citation.journaltitle | IEEE Microwave and Wireless Components Letters | - |
dc.identifier.wosid | 000417080200024 | - |
dc.identifier.scopusid | 2-s2.0-85032286344 | - |
dc.citation.endpage | 1112 | - |
dc.citation.number | 12 | - |
dc.citation.startpage | 1110 | - |
dc.citation.volume | 27 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Wooyeol | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | GHZ | - |
dc.subject.keywordPlus | CMOS | - |
dc.subject.keywordAuthor | Complementary metal-oxide-semiconductor (CMOS) | - |
dc.subject.keywordAuthor | frequency tripler | - |
dc.subject.keywordAuthor | Schottky barrier diode | - |
dc.subject.keywordAuthor | self-biased complementary antiparallel diode pair (SB-CAPDP) | - |
dc.subject.keywordAuthor | self-dynamic biasing | - |
dc.subject.keywordAuthor | static dc biasing | - |
dc.subject.keywordAuthor | subterahertz | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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