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Self-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler

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dc.contributor.authorShim, Dongha-
dc.contributor.authorChoi, Wooyeol-
dc.contributor.authorLee, Jong-Wook-
dc.contributor.authorKenneth, K. O.-
dc.date.accessioned2024-04-30T06:13:29Z-
dc.date.available2024-04-30T06:13:29Z-
dc.date.created2024-04-26-
dc.date.issued2017-12-
dc.identifier.citationIEEE Microwave and Wireless Components Letters, Vol.27 No.12, pp.1110-1112-
dc.identifier.issn1531-1309-
dc.identifier.urihttps://hdl.handle.net/10371/200046-
dc.description.abstractA 157-GHz complementary antiparallel diode pair (CAPDP) frequency tripler using a combination of self-dynamic and static dc biasing to enhance output power and conversion efficiency is demonstrated in 130-nm complementary metal-oxide-semiconductor. The self-dynamic biasing expands the off-zone of CAPDP to reduce the output power roll-off at high input levels. A negative static dc bias tunes the off-zone to enhance the nonlinearity to increase the output power at low input levels. The frequency tripler generates -18.6 dBm maximum output power (P-OUT) at 157.5 GHz at the input power (P-IN) of 13.4 dBm. At P-IN of 11 dBm, P-OUT is 2.7-dB higher or conversion loss (CL) is 2.7-dB lower than the tripler with a cathode-tied CAPDP. At P-IN greater than 13.4 dBm, P-OUT should be more than 4.3-dB higher and CL is more than 4.3-dB lower.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleSelf-Dynamic and Static Biasing for Output Power and Efficiency Enhancement of Complementary Antiparallel Diode Pair Frequency Tripler-
dc.typeArticle-
dc.identifier.doi10.1109/LMWC.2017.2757845-
dc.citation.journaltitleIEEE Microwave and Wireless Components Letters-
dc.identifier.wosid000417080200024-
dc.identifier.scopusid2-s2.0-85032286344-
dc.citation.endpage1112-
dc.citation.number12-
dc.citation.startpage1110-
dc.citation.volume27-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Wooyeol-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusGHZ-
dc.subject.keywordPlusCMOS-
dc.subject.keywordAuthorComplementary metal-oxide-semiconductor (CMOS)-
dc.subject.keywordAuthorfrequency tripler-
dc.subject.keywordAuthorSchottky barrier diode-
dc.subject.keywordAuthorself-biased complementary antiparallel diode pair (SB-CAPDP)-
dc.subject.keywordAuthorself-dynamic biasing-
dc.subject.keywordAuthorstatic dc biasing-
dc.subject.keywordAuthorsubterahertz-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area High Frequency Microelectronics, Microwave engineering, Radio Frequency Integrated Circuit, 초고주파 공학, 초고주파 시스템, 초고주파 집적회로

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