Publications
Detailed Information
Devices in CMOS for Terahertz Circuits and Systems
Cited 1 time in
Web of Science
Cited 1 time in Scopus
- Authors
- Issue Date
- 2017
- Publisher
- ELECTROCHEMICAL SOC INC
- Citation
- SEMICONDUCTOR PROCESS INTEGRATION 10, Vol.80 No.4, pp.3-15
- Abstract
- CMOS (Complementary Metal Oxide Semiconductor) integrated circuits (IC's) technology has emerged as a means for realization of capable and affordable systems that operate at 300 GHz and higher. Signal generation up to 1.3 THz, coherent detection up to 410 GHz and incoherent detection up to similar to 10 THz have been demonstrated using CMOS integrated circuits. Furthermore, a highly integrated rotational spectroscopy transceiver operating up to near 300 GHz and imaging arrays operating near 1 THz have been demonstrated in CMOS. Signal generation as well as coherent detection up to 5 THz as well as incoherent detection beyond 40 THz with sufficient performance for practical applications should be possible in CMOS especially with minor process modifications to optimize the performance of MOS varactors and Schottky barrier diodes.
- ISSN
- 1938-5862
- Files in This Item:
- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.