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Power Semiconductor Module With Low-Permittivity Material to Reduce Common-Mode Electromagnetic Interference
Cited 14 time in
Web of Science
Cited 24 time in Scopus
- Authors
- Issue Date
- 2018-12
- Citation
- IEEE TRANSACTIONS ON POWER ELECTRONICS, Vol.33 No.12, pp.10027-10031
- Abstract
- The layout of a low-permittivity material is designed in a power semiconductor module to reduce parasitic common-mode (CM) capacitance and hence attenuate the CM current. Without sacrificing the thermal performance between the semiconductor devices and heat sink, a portion of the bottom copper of a direct-bond-copper substrate is replaced by air to decrease capacitance. The proposed power module is verified in a 1-kW 100-kHz buck converter. The CM current is decreased by 8 dB in the frequency domain without any additional components or filters.
- ISSN
- 0885-8993
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- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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