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Angstrom-Confined Electrochemical Synthesis of Sub-Unit-Cell Non-Van Der Waals 2D Metal Oxides

Cited 3 time in Web of Science Cited 4 time in Scopus
Authors

Ji, Dali; Lee, Yunah; Nishina, Yuta; Kamiya, Kazuhide; Daiyan, Rahman; Chu, Dewei; Wen, Xinyue; Yoshimura, Masamichi; Kumar, Priyank; Andreeva, Daria V.; Novoselov, Kostya S.; Lee, Gwan-Hyoung; Joshi, Rakesh; Foller, Tobias

Issue Date
2023-07
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Citation
Advanced Materials, Vol.35 No.30
Abstract
Bottom-up electrochemical synthesis of atomically thin materials is desirable yet challenging, especially for non-vanderWaals (non-vdW) materials. Thicknesses below a few nanometers have not been reported yet, posing the question how thin can non-vdW materials be electrochemically synthesized. This is important as materials with (sub-)unit-cell thickness often show remarkably different properties compared to their bulk form or thin films of several nanometers thickness. Here, a straightforward electrochemical method utilizing the angstrom-confinement of laminar reduced graphene oxide (rGO) nanochannels is introduced to obtain a centimeter-scale network of atomically thin (<4.3 & ANGS;) 2D-transition metal oxides (2D-TMO). The angstrom-confinement provides a thickness limitation, forcing sub-unit-cell growth of 2D-TMO with oxygen and metal vacancies. It is showcased that Cr2O3, a material without significant catalytic activity for the oxygen evolution reaction (OER) in bulk form, can be activated as a high-performing catalyst if synthesized in the 2D sub-unit-cell form. This method displays the high activity of sub-unit-cell form while retaining the stability of bulk form, promising to yield unexplored fundamental science and applications. It is shown that while retaining the advantages of bottom-up electrochemical synthesis, like simplicity, high yield, and mild conditions, the thickness of TMO can be limited to sub-unit-cell dimensions.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/202059
DOI
https://doi.org/10.1002/adma.202301506
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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