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Multioperation-Mode Light-Emitting Field-Effect Transistors Based on van der Waals Heterostructure

Cited 11 time in Web of Science Cited 14 time in Scopus

Kwon, Junyoung; Shin, June-Chul; Ryu, Huije; Lee, Jae Yoon; Seo, Dongjea; Watanabe, Kenji; Taniguchi, Takashi; Kim, Young Duck; Hone, James; Lee, Chul-HoLee, Gwan-Hyoung

Issue Date
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Advanced Materials, Vol.32 No.43, p. 2003567
2D semiconductors have shown great potential for application to electrically tunable optoelectronics. Despite the strong excitonic photoluminescence (PL) of monolayer transition metal dichalcogenides (TMDs), their efficient electroluminescence (EL) has not been achieved due to the low efficiency of charge injection and electron-hole recombination. Here, multioperation-mode light-emitting field-effect transistors (LEFETs) consisting of a monolayer WSe(2)channel and graphene contacts coupled with two top gates for selective and balanced injection of charge carriers are demonstrated. Visibly observable EL is achieved with the high external quantum efficiency of approximate to 6% at room temperature due to efficient recombination of injected electrons and holes in a confined 2D channel. Further, electrical tunability of both the channel and contacts enables multioperation modes, such as antiambipolar, depletion,and unipolar regions, which can be utilized for polarity-tunable field-effect transistors and photodetectors. The work exhibits great potential for use in 2D semiconductor LEFETs for novel optoelectronics capable of high efficiency, multifunctions, and heterointegration.
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리


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