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2D semiconducting materials for electronic and optoelectronic applications: potential and challenge

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dc.contributor.authorKang, Sojung-
dc.contributor.authorLee, Donghun-
dc.contributor.authorKim, Jonghun-
dc.contributor.authorCapasso, Andrea-
dc.contributor.authorKang, Hee Seong-
dc.contributor.authorPark, Jin-Woo-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorLee, Gwan-Hyoung-
dc.date.accessioned2024-05-14T07:41:12Z-
dc.date.available2024-05-14T07:41:12Z-
dc.date.created2020-05-08-
dc.date.created2020-05-08-
dc.date.created2020-05-08-
dc.date.created2020-05-08-
dc.date.issued2020-04-
dc.identifier.citation2D Materials, Vol.7 No.2, p. 022003-
dc.identifier.issn2053-1583-
dc.identifier.urihttps://hdl.handle.net/10371/202090-
dc.description.abstractTwo-dimensional (2D) semiconductors hold promises for electronic and optoelectronic applications due to their outstanding electrical and optical properties. Despite a short research history, a wide range of 'proof-of-concept' devices based on 2D materials have been demonstrated, highlighting their impact in advanced technology. Here we review the unique properties 2D semiconducting materials and their applications in terms of electronic and optoelectronic devices. We summarize all the engineering issues in 2D devices, including material quality, dielectric, and contacts. We also discuss recent advances of 2D semiconductor devices in electronic and optoelectronic applications. This review would help to understand superior performance and multifunctions of 2D semiconductor devices and guide us toward new device applications of 2D semiconductors.-
dc.language영어-
dc.publisherInstitute of Physics Publishing (IOP)-
dc.title2D semiconducting materials for electronic and optoelectronic applications: potential and challenge-
dc.typeArticle-
dc.identifier.doi10.1088/2053-1583/ab6267-
dc.citation.journaltitle2D Materials-
dc.identifier.wosid000526435400001-
dc.identifier.scopusid2-s2.0-85082526382-
dc.citation.number2-
dc.citation.startpage022003-
dc.citation.volume7-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeReview-
dc.description.journalClass1-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusDER-WAALS HETEROSTRUCTURE-
dc.subject.keywordPlusHEXAGONAL BORON-NITRIDE-
dc.subject.keywordPlusLIGHT-EMITTING-DIODES-
dc.subject.keywordPlusBLACK PHOSPHORUS-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusMETAL DICHALCOGENIDE-
dc.subject.keywordPlusMOLYBDENUM-DISULFIDE-
dc.subject.keywordPlusGRAIN-BOUNDARIES-
dc.subject.keywordPlusMOS2 TRANSISTORS-
dc.subject.keywordAuthortransition metal dichalcogenides-
dc.subject.keywordAuthorvan der Waals heterostructure-
dc.subject.keywordAuthortransistor-
dc.subject.keywordAuthoroptoelectronic device-
dc.subject.keywordAuthorcontact-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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