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Thickness-dependent Schottky barrier height of MoS2 field-effect transistors
Cited 116 time in
Web of Science
Cited 116 time in Scopus
- Authors
- Issue Date
- 2017-05
- Publisher
- Royal Society of Chemistry
- Citation
- Nanoscale, Vol.9 No.18, pp.6151-6157
- Abstract
- 2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.
- ISSN
- 2040-3364
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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