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Epitaxially Self-Assembled Alkane Layers for Graphene Electronics

Cited 26 time in Web of Science Cited 24 time in Scopus
Authors

Yu, Young-Jun; Lee, Gwan-Hyoung; Choi, Ji Il; Shim, Yoon Su; Lee, Chul-Ho; Kang, Seok Ju; Lee, Sunwoo; Rim, Kwang Taeg; Flynn, George W.; Hone, James; Kim, Yong-Hoon; Kim, Philip; Nuckolls, Colin; Ahn, Seokhoon

Issue Date
2017-02
Publisher
WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Citation
Advanced Materials, Vol.29 No.5, p. 1603925
Abstract
The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane selfassembled layers.
ISSN
0935-9648
URI
https://hdl.handle.net/10371/202112
DOI
https://doi.org/10.1002/adma.201603925
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Related Researcher

  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2D crystal structures , 2D materials and fabrication processing, Advanced battery materials, Next-generation electronic devices

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