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All-Solution-Processed High-Performance MoS<sub>2</sub> Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric
DC Field | Value | Language |
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dc.contributor.author | Joung, Su-Yeon | - |
dc.contributor.author | Yim, Haena | - |
dc.contributor.author | Lee, Donghun | - |
dc.contributor.author | Shim, Jaehyung | - |
dc.contributor.author | Yoo, So Yeon | - |
dc.contributor.author | Kim, Yeon Ho | - |
dc.contributor.author | Kim, Jin Seok | - |
dc.contributor.author | Kim, Hyunjun | - |
dc.contributor.author | Hyeong, Seok-Ki | - |
dc.contributor.author | Kim, Junhee | - |
dc.contributor.author | Noh, Yong-Young | - |
dc.contributor.author | Bae, Sukang | - |
dc.contributor.author | Park, Myung Jin | - |
dc.contributor.author | Choi, Ji-Won | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.date.accessioned | 2024-05-16T01:09:15Z | - |
dc.date.available | 2024-05-16T01:09:15Z | - |
dc.date.created | 2024-02-05 | - |
dc.date.created | 2024-02-05 | - |
dc.date.issued | 2024-01 | - |
dc.identifier.citation | ACS Nano, Vol.18 No.3, pp.1958-1968 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202211 | - |
dc.description.abstract | Assembling solution-processed van der Waals (vdW) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed vdW electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processedvdW thin-film transistors (TFTs) comprising molybdenum disulfides (MoS2) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 degrees C. The fabricated MoS2 TFTs exhibit excellent device characteristics, including high mobility (>10 cm(2) V-1 s(-1)) and an on/off ratio exceeding 10(6). Additionally, the use of a high-k dielectric allows for operation at low voltage (similar to 5 V) and leakage current (similar to 10(-11) A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | All-Solution-Processed High-Performance MoS2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.3c06972 | - |
dc.citation.journaltitle | ACS Nano | - |
dc.identifier.wosid | 001148238800001 | - |
dc.identifier.scopusid | 2-s2.0-85182007709 | - |
dc.citation.endpage | 1968 | - |
dc.citation.number | 3 | - |
dc.citation.startpage | 1958 | - |
dc.citation.volume | 18 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | GATE | - |
dc.subject.keywordPlus | EXFOLIATION | - |
dc.subject.keywordPlus | YIELD | - |
dc.subject.keywordPlus | TFTS | - |
dc.subject.keywordAuthor | two-dimensional materials | - |
dc.subject.keywordAuthor | solution process | - |
dc.subject.keywordAuthor | thin-film transistors | - |
dc.subject.keywordAuthor | quasi-2Dperovskite oxide dielectric | - |
dc.subject.keywordAuthor | low-temperature processing | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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