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Bowing-alleviated continuous bandgap engineering of wafer-scale WS2xSe2(1-x) monolayer alloys and their assembly into hetero-multilayers : Bowing-alleviated continuous bandgap engineering of wafer-scale WS(2)(x)Se(2(1-x) )monolayer alloys and their assembly into hetero-multilayers
Cited 4 time in
Web of Science
Cited 5 time in Scopus
- Authors
- Issue Date
- 2022-12
- Publisher
- Nature Publishing Group
- Citation
- NPG Asia Materials, Vol.14 No.1, p. 90
- Abstract
- Bandgap engineering of compound semiconductors and the fabrication of bandgap-modulated heterostructures are important for enabling the development of modern optoelectronics. However, these engineering processes are challenging for two-dimensional (2D) semiconductors of transition metal dichalcogenides, particularly on a large scale. Herein, we report the wafer-scale homogeneous growth of composition-modulated WS2xSe2(1-x) alloys with a continuously tunable bandgap using metal-organic chemical vapor deposition. Well-optimized growth produces monolayer films with excellent homogeneity over the entire wafer. The substitutional atomic chalcogen (S, Se) concentration in WS2xSe2(1-x) alloys is precisely controlled by varying the flow rate of the metal-organic precursors, leading to a bandgap modulation from 1.67 to 2.05 eV, as determined from absorbance spectra. Notably, the optical bandgap of WS2xSe2(1-x) alloys exhibits a nearly linear relationship with the chalcogen composition, implying a low bowing effect. This bowing-alleviated bandgap modulation is attributed to the small lattice mismatch, strain relaxation, and thermodynamic miscibility in the WS2xSe2(1-x) alloys, as confirmed by density-functional theory calculations. Furthermore, the fabrication of hetero-multilayers by stacking differently alloyed films is demonstrated. The produced heterostructure film exhibits a broad spectral absorbance distinct from that of the individual layers. The findings of this study provide insights for the advancement of versatile design of functional 2D optoelectronics.
- ISSN
- 1884-4049
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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