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Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huh, Woong | - |
dc.contributor.author | Lee, Donghun | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.date.accessioned | 2024-05-16T01:10:31Z | - |
dc.date.available | 2024-05-16T01:10:31Z | - |
dc.date.created | 2023-04-19 | - |
dc.date.created | 2023-04-19 | - |
dc.date.issued | 2020-12 | - |
dc.identifier.citation | Advanced Materials, Vol.32 No.51, p. 2002092 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202246 | - |
dc.description.abstract | The memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.202002092 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000572897700001 | - |
dc.identifier.scopusid | 2-s2.0-85091607882 | - |
dc.citation.number | 51 | - |
dc.citation.startpage | 2002092 | - |
dc.citation.volume | 32 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | 2-DIMENSIONAL MATERIALS | - |
dc.subject.keywordPlus | TRANSITION | - |
dc.subject.keywordPlus | MECHANISM | - |
dc.subject.keywordPlus | SINGLE | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | DEVICE | - |
dc.subject.keywordPlus | INTERCALATION | - |
dc.subject.keywordPlus | OPPORTUNITIES | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordAuthor | 2D materials | - |
dc.subject.keywordAuthor | artificial synapses | - |
dc.subject.keywordAuthor | memristors | - |
dc.subject.keywordAuthor | neuromorphic electronics | - |
dc.subject.keywordAuthor | transition metal dichalcogenides | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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