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Memristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics

DC Field Value Language
dc.contributor.authorHuh, Woong-
dc.contributor.authorLee, Donghun-
dc.contributor.authorLee, Chul-Ho-
dc.date.accessioned2024-05-16T01:10:31Z-
dc.date.available2024-05-16T01:10:31Z-
dc.date.created2023-04-19-
dc.date.created2023-04-19-
dc.date.issued2020-12-
dc.identifier.citationAdvanced Materials, Vol.32 No.51, p. 2002092-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://hdl.handle.net/10371/202246-
dc.description.abstractThe memristor, a composite word of memory and resistor, has become one of the most important electronic components for brain-inspired neuromorphic computing in recent years. This device has the ability to control resistance with multiple states by memorizing the history of previous electrical inputs, enabling it to mimic a biological synapse in the neural network of the human brain. Among many candidates for memristive materials, including metal oxides, organic materials, and low-dimensional nanomaterials, 2D layered materials have been widely investigated owing to their outstanding physical properties and electrical tunability, low-power-switching capability, and hetero-integration compatibility. Hence, a large number of experimental demonstrations on 2D material-based memristors have been reported showing their unique memristive characteristics and novel synaptic functionalities, distinct from traditional bulk-material-based systems. Herein, an overview of the latest advances in the structures, mechanisms, and memristive characteristics of 2D material-based memristors is presented. Additionally, novel strategies to modulate and enhance the synaptic functionalities of 2D-memristor-based artificial synapses are summarized. Finally, as a foreseeing perspective, the potentials and challenges of these emerging materials for future neuromorphic electronics are also discussed.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleMemristors Based on 2D Materials as an Artificial Synapse for Neuromorphic Electronics-
dc.typeArticle-
dc.identifier.doi10.1002/adma.202002092-
dc.citation.journaltitleAdvanced Materials-
dc.identifier.wosid000572897700001-
dc.identifier.scopusid2-s2.0-85091607882-
dc.citation.number51-
dc.citation.startpage2002092-
dc.citation.volume32-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlus2-DIMENSIONAL MATERIALS-
dc.subject.keywordPlusTRANSITION-
dc.subject.keywordPlusMECHANISM-
dc.subject.keywordPlusSINGLE-
dc.subject.keywordPlusPERFORMANCE-
dc.subject.keywordPlusMEMORY-
dc.subject.keywordPlusDEVICE-
dc.subject.keywordPlusINTERCALATION-
dc.subject.keywordPlusOPPORTUNITIES-
dc.subject.keywordPlusTRANSPARENT-
dc.subject.keywordAuthor2D materials-
dc.subject.keywordAuthorartificial synapses-
dc.subject.keywordAuthormemristors-
dc.subject.keywordAuthorneuromorphic electronics-
dc.subject.keywordAuthortransition metal dichalcogenides-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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