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Temperature dependence of optical properties of monolayer WS2 by spectroscopic ellipsometry

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dc.contributor.authorHoang Tung Nguyen-
dc.contributor.authorKim, Tae Jung-
dc.contributor.authorPark, Han Gyeol-
dc.contributor.authorVan Long Le-
dc.contributor.authorNguyen, Xuan Au-
dc.contributor.authorKoo, Dohyoung-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorCuong, Do Duc-
dc.contributor.authorHong, Soon Cheol-
dc.contributor.authorKim, Young Dong-
dc.date.accessioned2024-05-16T01:10:50Z-
dc.date.available2024-05-16T01:10:50Z-
dc.date.created2023-04-19-
dc.date.issued2020-05-
dc.identifier.citationApplied Surface Science, Vol.511, p. 145503-
dc.identifier.issn0169-4332-
dc.identifier.urihttps://hdl.handle.net/10371/202252-
dc.description.abstractThe complex dielectric function epsilon = epsilon(1) + i epsilon(2) of monolayer tungsten disulfide (WS2) is investigated for the energy range from 1.5 to 6.0 eV and temperatures from 41 to 300 K. Measurements were performed under ultra-high vacuum conditions to avoid degradation and overlayer contamination. Fourteen critical-point (CP) energies were observed and their origins in Brillouin-zone were identified by band structure calculations. At low temperature the A and B excitonic peaks split into four CPs, which is understood as the neutral and charged exciton states of monolayer WS2. At low temperatures the CP energies show blue shifts with enhanced structure due to the reduction of electron-phonon interaction. The temperature dependence of these data was obtained by a phenomenological expression with Bose-Einstein statistical factor.-
dc.language영어-
dc.publisherElsevier BV-
dc.titleTemperature dependence of optical properties of monolayer WS2 by spectroscopic ellipsometry-
dc.typeArticle-
dc.identifier.doi10.1016/j.apsusc.2020.145503-
dc.citation.journaltitleApplied Surface Science-
dc.identifier.wosid000517883800090-
dc.identifier.scopusid2-s2.0-85079012558-
dc.citation.startpage145503-
dc.citation.volume511-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusCRITICAL-POINTS-
dc.subject.keywordPlusLIGHT-EMISSION-
dc.subject.keywordPlusMONO LAYER-
dc.subject.keywordPlusMOS2-
dc.subject.keywordPlusDYNAMICS-
dc.subject.keywordPlusEXCITONS-
dc.subject.keywordPlusPHOTOLUMINESCENCE-
dc.subject.keywordPlusSAPPHIRE-
dc.subject.keywordPlusSHEETS-
dc.subject.keywordAuthorSpectroscopic ellipsometry-
dc.subject.keywordAuthorMonolayer tungsten disulphide (WS2)-
dc.subject.keywordAuthorDielectric function-
dc.subject.keywordAuthorExciton-
dc.subject.keywordAuthorCritical point-
dc.subject.keywordAuthorTemperature dependence-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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