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Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Cheol-Joon | - |
dc.contributor.author | Park, Hyeon Jung | - |
dc.contributor.author | Lee, Jae Yoon | - |
dc.contributor.author | Kim, Jeongyong | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Joo, Jinsoo | - |
dc.date.accessioned | 2024-05-16T01:11:20Z | - |
dc.date.available | 2024-05-16T01:11:20Z | - |
dc.date.created | 2023-04-19 | - |
dc.date.created | 2023-04-19 | - |
dc.date.issued | 2018-09 | - |
dc.identifier.citation | ACS Applied Materials & Interfaces, Vol.10 No.35, pp.29848-29856 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202260 | - |
dc.description.abstract | A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices. Furthermore, the photovoltaic | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.8b11559 | - |
dc.citation.journaltitle | ACS Applied Materials & Interfaces | - |
dc.identifier.wosid | 000444355700068 | - |
dc.identifier.scopusid | 2-s2.0-85052280836 | - |
dc.citation.endpage | 29856 | - |
dc.citation.number | 35 | - |
dc.citation.startpage | 29848 | - |
dc.citation.volume | 10 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SOLAR-ENERGY CONVERSION | - |
dc.subject.keywordPlus | LIGHT-EMITTING-DIODES | - |
dc.subject.keywordPlus | MONOLAYER MOS2 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | PHOTOLUMINESCENCE | - |
dc.subject.keywordPlus | PENTACENE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordAuthor | rubrene | - |
dc.subject.keywordAuthor | molybdenum disulfide | - |
dc.subject.keywordAuthor | ambipolar | - |
dc.subject.keywordAuthor | photovoltaic | - |
dc.subject.keywordAuthor | transistor | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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