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Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition
Cited 8 time in
Web of Science
Cited 10 time in Scopus
- Authors
- Issue Date
- 2017-09
- Publisher
- Institute of Physics Publishing
- Citation
- Nanotechnology, Vol.28 No.39, p. 394001
- Abstract
- ZnO radial p-n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. We report on ZnO radial p-n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO. Ultraviolet and visible electroluminescence of ZnO radial p-n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. The reported research opens a pathway of realisation of production-compatible ZnO p-n junction LEDs.
- ISSN
- 0957-4484
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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