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Microtube light-emitting diode arrays with metal cores

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dc.contributor.authorTchoe, Youngbin-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorPark, Jun Beom-
dc.contributor.authorBaek, Hyeonjun-
dc.contributor.authorChung, Kunook-
dc.contributor.authorJo, Janghyun-
dc.contributor.authorKim, Miyoung-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2024-05-16T01:13:43Z-
dc.date.available2024-05-16T01:13:43Z-
dc.date.created2018-08-25-
dc.date.created2018-08-25-
dc.date.issued2016-03-
dc.identifier.citationACS Nano, Vol.10 No.3, pp.3114-3120-
dc.identifier.issn1936-0851-
dc.identifier.urihttps://hdl.handle.net/10371/202299-
dc.description.abstractWe report the fabrication and characteristics of vertical microtube light-emitting diode (LED) arrays with a metal core inside the devices. To make the LEDs, gallium nitride (GaN)/indium gallium nitride (InxGa1-xN)/zinc oxide (ZnO) coaxial microtube LED arrays were grown on an n-GaN/c-aluminum oxide (Al2O3) substrate. The micro tube LED arrays were then lifted-off the substrate by wet chemical etching of the sacrificial ZnO microtubes and the silicon dioxide (SiO2) layer. The chemically lifted-off LED layer was then transferred upside-down on other supporting substrates. To create the metal cores, titanium/gold and indium tin oxide were deposited on the inner shells of the microtubes, forming n-type electrodes inside the metal-cored LEDs. The characteristics of the resulting devices were determined by measuring electroluminescence and current voltage characteristic curves. To gain insights into the current spreading characteristics of the devices and understand how to make them more efficient, we modeled them computationally.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleMicrotube light-emitting diode arrays with metal cores-
dc.typeArticle-
dc.identifier.doi10.1021/acsnano.5b07905-
dc.citation.journaltitleACS Nano-
dc.identifier.wosid000372855400011-
dc.identifier.scopusid2-s2.0-84961932761-
dc.citation.endpage3120-
dc.citation.number3-
dc.citation.startpage3114-
dc.citation.volume10-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.contributor.affiliatedAuthorKim, Miyoung-
dc.contributor.affiliatedAuthorYi, Gyu-Chul-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusNANOSTRUCTURES-
dc.subject.keywordAuthorlight-emitting diodes-
dc.subject.keywordAuthornanoarchitecture-
dc.subject.keywordAuthormetal core-
dc.subject.keywordAuthorcurrent spreading-
dc.subject.keywordAuthorgallium nitride-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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