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Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1-xN/GaN multishell nanotube heterostructures

Cited 17 time in Web of Science Cited 18 time in Scopus
Authors

Hong, Young Joon; Lee, Chul-Ho; Yoo, Jinkyoung; Kim, Yong-Jin; Jeong, Junseok; Kim, Miyoung; Yi, Gyu-Chul

Issue Date
2015-12
Publisher
Nature Publishing Group
Citation
Scientific Reports, Vol.5, p. 18020
Abstract
Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p-n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane InxGa1-xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the InxGa1-xN MQWs in the range 0.13 <= x <= 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via the formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. The method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.
ISSN
2045-2322
URI
https://hdl.handle.net/10371/202310
DOI
https://doi.org/10.1038/srep18020
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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