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GaN nanowire/thin film vertical structure p-n junction light-emitting diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Young Joon | - |
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Park, Jun Beom | - |
dc.contributor.author | An, Sung Jin | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2024-05-16T01:16:17Z | - |
dc.date.available | 2024-05-16T01:16:17Z | - |
dc.date.created | 2021-09-23 | - |
dc.date.created | 2021-09-23 | - |
dc.date.issued | 2013-12 | - |
dc.identifier.citation | Applied Physics Letters, Vol.103 No.26, p. 261116 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202329 | - |
dc.description.abstract | Here, we report vertical-type GaN nanowire-based light-emitting diodes (LEDs) fabricated by the metal-catalyzed vapor-liquid-solid (VLS) method. The nickel-catalyzed VLS process yielded both n-GaN nanowires and GaN nanoislands on substrates. The nanoislands markedly deteriorated the diode and electroluminescent characteristics in n-nanowire/p-film LED structures because of parasitic resistance and deep level emission caused by nanoislands. By burying the nanoislands with an insulating layer and adopting coaxial p-n junction nanowire structures, nanowire-based LEDs were shown to exhibit superior device performance, including highly rectifying and monochromatic electroluminescent characteristics. Thus, the undesirable effects associated with nanoislands were considerably suppressed. This work provides a rationale for designing high-performance vertical nanowire-based LEDs. (C) 2013 AIP Publishing LLC. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | GaN nanowire/thin film vertical structure p-n junction light-emitting diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4860971 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000329977400016 | - |
dc.identifier.scopusid | 2-s2.0-84891607553 | - |
dc.citation.number | 26 | - |
dc.citation.startpage | 261116 | - |
dc.citation.volume | 103 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.contributor.affiliatedAuthor | Yi, Gyu-Chul | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | INAS NANOWIRES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | EFFICIENCY | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | CELLS | - |
dc.subject.keywordPlus | SI | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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