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GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Hong, Young Joon | - |
dc.contributor.author | Kim, Yong-Jin | - |
dc.contributor.author | Yoo, Jinkyoung | - |
dc.contributor.author | Baek, Hyeonjun | - |
dc.contributor.author | Jeon, Seong-Ran | - |
dc.contributor.author | Lee, Seung-Jae | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2024-05-16T01:17:29Z | - |
dc.date.available | 2024-05-16T01:17:29Z | - |
dc.date.created | 2021-06-18 | - |
dc.date.created | 2021-06-18 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | IEEE Journal on Selected Topics in Quantum Electronics, Vol.17 No.4, pp.966-970 | - |
dc.identifier.issn | 1077-260X | - |
dc.identifier.uri | https://hdl.handle.net/10371/202351 | - |
dc.description.abstract | We report the fabrication and luminescent characteristics of GaN-based visible light-emitting diode (LED) arrays on Si substrates. For the fabrication of the LEDs, high-quality GaN/ZnO coaxial nanotube heterostructures were prepared by the heteroepitaxial growth of GaN layers on position-controlled ZnO nanotube arrays grown on 1-mu m-thick crack-free GaN/Si substrates. The nanostructured LEDs were composed of GaN-based p-n homo-junction with GaN/In(1-x)Ga(x)N multiple quantum wells (MQWs) coaxially coated on GaN/ZnO nanotube heterostructures. The fabricated micro-LEDs emitted visible green light that originated from the MQWs of individual coaxial LEDs. In addition, the origin of the light emission was investigated by measuring cathodoluminescence and electroluminescence spectra. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | GaN/ZnO Nanotube Heterostructure Light-Emitting Diodes Fabricated on Si | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/JSTQE.2010.2062493 | - |
dc.citation.journaltitle | IEEE Journal on Selected Topics in Quantum Electronics | - |
dc.identifier.wosid | 000293755500023 | - |
dc.identifier.scopusid | 2-s2.0-80051696570 | - |
dc.citation.endpage | 970 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 966 | - |
dc.citation.volume | 17 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.contributor.affiliatedAuthor | Yi, Gyu-Chul | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | EPITAXY | - |
dc.subject.keywordPlus | OPTOELECTRONICS | - |
dc.subject.keywordPlus | ULTRAVIOLET | - |
dc.subject.keywordPlus | NANOWIRES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | THICK | - |
dc.subject.keywordAuthor | Light-emitting diode (LED) | - |
dc.subject.keywordAuthor | nanoepitaxy | - |
dc.subject.keywordAuthor | nanophotonics | - |
dc.subject.keywordAuthor | Si | - |
dc.subject.keywordAuthor | ZnO | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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