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Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices

Cited 557 time in Web of Science Cited 583 time in Scopus
Authors

Chung, Kunook; Lee, Chul-Ho; Yi, Gyu-Chul

Issue Date
2010-10
Publisher
American Association for the Advancement of Science
Citation
Science, Vol.330 No.6004, pp.655-657
Abstract
We fabricated transferable gallium nitride (GaN) thin films and light-emitting diodes (LEDs) using graphene-layered sheets. Heteroepitaxial nitride thin films were grown on graphene layers by using high-density, vertically aligned zinc oxide nanowalls as an intermediate layer. The nitride thin films on graphene layers show excellent optical characteristics at room temperature, such as stimulated emission. As one of the examples for device applications, LEDs that emit strong electroluminescence emission under room illumination were fabricated. Furthermore, the layered structure of a graphene substrate made it possible to easily transfer GaN thin films and GaN-based LEDs onto foreign substrates such as glass, metal, or plastic.
ISSN
0036-8075
URI
https://hdl.handle.net/10371/202359
DOI
https://doi.org/10.1126/science.1195403
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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