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GaN/In1−xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays : GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Chul-Ho | - |
dc.contributor.author | Yoo, Jinkyoung | - |
dc.contributor.author | Hong, Young Joon | - |
dc.contributor.author | Cho, Jeonghui | - |
dc.contributor.author | Kim, Yong-Jin | - |
dc.contributor.author | Jeon, Seong-Ran | - |
dc.contributor.author | Baek, Jong Hyeob | - |
dc.contributor.author | Yi, Gyu-Chul | - |
dc.date.accessioned | 2024-05-16T01:18:55Z | - |
dc.date.available | 2024-05-16T01:18:55Z | - |
dc.date.created | 2023-04-19 | - |
dc.date.created | 2023-04-19 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.citation | Applied Physics Letters, Vol.94 No.21, p. 213101 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202380 | - |
dc.description.abstract | We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | GaN/In1−xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays | - |
dc.title.alternative | GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.3139865 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000266500400045 | - |
dc.identifier.scopusid | 2-s2.0-66549118690 | - |
dc.citation.number | 21 | - |
dc.citation.startpage | 213101 | - |
dc.citation.volume | 94 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
dc.contributor.affiliatedAuthor | Yi, Gyu-Chul | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | NANOWIRE HETEROSTRUCTURES | - |
dc.subject.keywordPlus | NANOROD HETEROSTRUCTURES | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordAuthor | electroluminescence | - |
dc.subject.keywordAuthor | gallium compounds | - |
dc.subject.keywordAuthor | III-V semiconductors | - |
dc.subject.keywordAuthor | II-VI semiconductors | - |
dc.subject.keywordAuthor | indium compounds | - |
dc.subject.keywordAuthor | light emitting diodes | - |
dc.subject.keywordAuthor | nanotubes | - |
dc.subject.keywordAuthor | wide band gap semiconductors | - |
dc.subject.keywordAuthor | zinc compounds | - |
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- College of Engineering
- Department of Electrical and Computer Engineering
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