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Thermoelectric power measurements of wide band gap semiconducting nanowires

Cited 64 time in Web of Science Cited 85 time in Scopus

Lee, Chul-Ho; Yi, Gyu-Chul; Zuev, Yuri M.; Kim, Philip

Issue Date
American Institute of Physics
Applied Physics Letters, Vol.94 No.2, p. 022106
We investigated the temperature-dependent thermoelectric power (TEP) of individual wide band gap ZnO and GaN semiconducting nanowires by fabricating the devices with good Ohmic contacts. In the temperature range of 10-300 K, the measured TEP of both nanowires was linearly dependent on temperature, indicating the degenerate doping nature of these nanowires. The room temperature TEP value of ZnO nanowires was as high as -400 mu V/K while an order of magnitude smaller TEP value was observed in GaN. The negative sign of TEP values shows that electrons are the majority carriers in these wide band gap nanowires. More importantly, in comparison with gate-dependent transport measurements of the nanowire field effect transistors, analysis of temperature-dependent TEP measurements provides a reliable way of estimating the majority carrier concentration of nanowires, where conventional Hall effect measurements cannot be used.
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리


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