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ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Lee, Chul-Ho | - |
| dc.contributor.author | Yoo, Jinkyoung | - |
| dc.contributor.author | Doh, Yong-Joo | - |
| dc.contributor.author | Yi, Gyu-Chul | - |
| dc.date.accessioned | 2024-05-16T01:19:12Z | - |
| dc.date.available | 2024-05-16T01:19:12Z | - |
| dc.date.created | 2023-04-19 | - |
| dc.date.created | 2023-04-19 | - |
| dc.date.issued | 2009-01 | - |
| dc.identifier.citation | Applied Physics Letters, Vol.94 No.4, p. 043504 | - |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/202390 | - |
| dc.description.abstract | We report on fabrication and electrical characteristics of field effect transistors (FETs) based on ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures. As compared to bare ZnO nanorod FETs, coaxial nanorod heterostructure FETs exhibited the enhanced mobility (similar to 110 cm(2)/V s), superior subthreshold swing (similar to 200 mV/decade), and negligibly small hysteresis to demonstrate very stable operation of high-performance nanorod FETs. In situ surface passivation and carrier confinement effects provided by heteroepitaxially grown Mg0.2Zn0.8O shell layer are presumably responsible for the highly enhanced device performance. | - |
| dc.language | 영어 | - |
| dc.publisher | American Institute of Physics | - |
| dc.title | ZnO/Mg0.2Zn0.8O coaxial nanorod heterostructures for high-performance electronic nanodevice applications | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1063/1.3075606 | - |
| dc.citation.journaltitle | Applied Physics Letters | - |
| dc.identifier.wosid | 000262971800118 | - |
| dc.identifier.scopusid | 2-s2.0-59349120063 | - |
| dc.citation.number | 4 | - |
| dc.citation.startpage | 043504 | - |
| dc.citation.volume | 94 | - |
| dc.description.isOpenAccess | Y | - |
| dc.contributor.affiliatedAuthor | Lee, Chul-Ho | - |
| dc.contributor.affiliatedAuthor | Yi, Gyu-Chul | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.subject.keywordPlus | RADIAL NANOWIRE HETEROSTRUCTURES | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | FLEXIBLE ELECTRONICS | - |
| dc.subject.keywordPlus | TRANSPARENT | - |
| dc.subject.keywordPlus | FABRICATION | - |
| dc.subject.keywordPlus | DEVICES | - |
| dc.subject.keywordAuthor | field effect transistors | - |
| dc.subject.keywordAuthor | II-VI semiconductors | - |
| dc.subject.keywordAuthor | magnesium compounds | - |
| dc.subject.keywordAuthor | nanostructured materials | - |
| dc.subject.keywordAuthor | nanotechnology | - |
| dc.subject.keywordAuthor | passivation | - |
| dc.subject.keywordAuthor | semiconductor heterojunctions | - |
| dc.subject.keywordAuthor | wide band gap semiconductors | - |
| dc.subject.keywordAuthor | zinc compounds | - |
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Related Researcher
- Lee, Chul-Ho이철호
- 부교수
- College of Engineering
- Department of Electrical and Computer Engineering
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