Publications

Detailed Information

Ultrafine ZnO nanowire electronic device arrays fabricated by selective metal-organic chemical vapor deposition

Cited 40 time in Web of Science Cited 42 time in Scopus
Authors

Park, W.I.; Lee, C.-H.; Chae, J.H.; Lee, D.H.; Yi, G.-C.

Issue Date
2009-01
Publisher
Wiley - V C H Verlag GmbbH & Co.
Citation
Small, Vol.5 No.2, pp.181-184
Abstract
The integrated fabrication of ultrafine ZnO nanowire devices using selective and lateral growth of ZnO nanowires on amorphous substrates was demonstrated. Two types of Au patterns were formed on degenerately doped n-type silicon (100) substrates coated with a 1-μm thick SiO2amorphous layer by using electron-beam lithography. Ti/Au metal electrodes were deposited on the ends of the nanowires by electron-beam lithography, evaporation of 100-Å-thick Ti and Au contacts, and lift-off processes. The Au patterns were used as alignment markers to form the metal electrodes at the ends of nanowires. Ti/Au source electrodes were deposited on the initial nucleation sites and the drain electrodes were created on the ends of the nanowires. The fabrication process resulted in the formation of nanowire bridges between metal electrode pairs with high connection rates greater than 90%.
ISSN
1613-6810
URI
https://hdl.handle.net/10371/202391
DOI
https://doi.org/10.1002/smll.200800617
Files in This Item:
There are no files associated with this item.
Appears in Collections:

Related Researcher

  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share