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Shape-Controlled Nanoarchitectures Using Nanowalls

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dc.contributor.authorHong, Young Joon-
dc.contributor.authorJung, Hye Seong-
dc.contributor.authorYoo, Jinkyoung-
dc.contributor.authorKim, Yong-Jin-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorKim, Miyoung-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2024-05-16T01:19:20Z-
dc.date.available2024-05-16T01:19:20Z-
dc.date.created2022-03-25-
dc.date.created2022-03-25-
dc.date.issued2009-01-
dc.identifier.citationAdvanced Materials, Vol.21 No.2, pp.222-226-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://hdl.handle.net/10371/202393-
dc.description.abstractA novel method for shaping and positioning ZnO nanoarchitectures using conventional lithography and catalyst-free metal organic vapor-phase epitaxy is demonstrated. Nanowalls and nanotubes of desired shapes and arrangements can be grown heteroepitaxially on Si substrates, and their electron-emission characteristics were optimized by changing their diameter and spacing. This method can be readily expanded to create many artificial 1 D and 2D structures, as required for various device applications.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleShape-Controlled Nanoarchitectures Using Nanowalls-
dc.typeArticle-
dc.identifier.doi10.1002/adma.200703168-
dc.citation.journaltitleAdvanced Materials-
dc.identifier.wosid000262870900014-
dc.identifier.scopusid2-s2.0-58449091568-
dc.citation.endpage226-
dc.citation.number2-
dc.citation.startpage222-
dc.citation.volume21-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.contributor.affiliatedAuthorKim, Miyoung-
dc.contributor.affiliatedAuthorYi, Gyu-Chul-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusCARBON NANOTUBE FILMS-
dc.subject.keywordPlusFIELD-EMISSION-
dc.subject.keywordPlusSEMICONDUCTOR NANOWIRES-
dc.subject.keywordPlusZNO NANORODS-
dc.subject.keywordPlusGROWTH-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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