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Observation of single-electron transport in a Zn0.8Mg0.2O/ZnO coaxial heterostructure nanorod

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dc.contributor.authorJeong, Dongchan-
dc.contributor.authorKi, Dong-Keun-
dc.contributor.authorBae, Myung-Ho-
dc.contributor.authorLee, Hu-Jong-
dc.contributor.authorLee, Chul-Ho-
dc.contributor.authorYoo, Jinkyoung-
dc.contributor.authorYi, Gyu-Chul-
dc.date.accessioned2024-05-16T01:19:53Z-
dc.date.available2024-05-16T01:19:53Z-
dc.date.created2023-04-19-
dc.date.created2023-04-19-
dc.date.issued2008-08-
dc.identifier.citationJournal of the Korean Physical Society, Vol.53 No.2, pp.962-966-
dc.identifier.issn0374-4884-
dc.identifier.urihttps://hdl.handle.net/10371/202412-
dc.description.abstractCoaxial Zn0.8Mg0.2O/ZnO hetrostructure semiconducting nanorods with different band gaps were fabricated on oxide-layer-covered Si substrates by using catalyst-free metal-organic vapor-phase epitaxy. The electrical conduction of nanorods with Ti/Au Schottky-contact electrodes, taken at various temperatures down to 50 mK, revealed a Coulomb-blockade behavior, pointing a multiple quantum-dot structure existing in the ZnO nanorod core or in the Zn0.8Mg0.2O cylindrical shell over a wide range of gate voltages. These characteristics, transformed into single-dot ones at high positive gate voltages. This study confirms, by electrical conduction measurements, the formation of a coaxial heterojunction structure between materials of two different band gaps and provides a possibility for utilizing the structure for three-terminal device applications.-
dc.language영어-
dc.publisher한국물리학회-
dc.titleObservation of single-electron transport in a Zn0.8Mg0.2O/ZnO coaxial heterostructure nanorod-
dc.typeArticle-
dc.identifier.doi10.3938/jkps.53.962-
dc.citation.journaltitleJournal of the Korean Physical Society-
dc.identifier.wosid000258481000006-
dc.identifier.scopusid2-s2.0-50949126551-
dc.citation.endpage966-
dc.citation.number2-
dc.citation.startpage962-
dc.citation.volume53-
dc.identifier.kciidART001474630-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Chul-Ho-
dc.contributor.affiliatedAuthorYi, Gyu-Chul-
dc.type.docTypeArticle; Proceedings Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorcoaxial heterojunction nanorod-
dc.subject.keywordAuthorquantum dot-
dc.subject.keywordAuthorCoulomb diamond-
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area 2차원 반도체 소자 및 재료, High-Performance 2D Electronics, Low-Power 2D Electronics, 뉴로모픽 소자 및 응용기술, 저전력 소자 및 소자물리

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