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Reversible Oxidative p-Doping in 2D Tin Halide Perovskite Field-Effect Transistors

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Kim, Yeeun; Woo, Jaeyong; Jung, Young-Kwang; Ahn, Heebeom; Kim, Inha; Reo, Youjin; Lim, Hyungbin; Lee, Changjun; Lee, Jonghoon; Kim, Yongjin; Choi, Hyeonmin; Lee, Min-Hyun; Lee, Jeongjae; Stranks, Samuel D.; Sirringhaus, Henning; Noh, Yong-Young; Kang, Keehoon; Lee, Takhee

Issue Date
American Chemical Society
ACS Energy Letters, Vol.9 No.4, pp.1725-1734
Tin (Sn) halide perovskites are promising materials for various electronic applications due to their favorable properties. However, facile interaction with atmospheric oxygen (O-2) often hinders the practical use of Sn-based perovskites, which is regarded as a major cause of undesired variations in their electrical and structural properties. Herein, we report the reversible p-doping in phenethylammonium tin iodide ((PEA)(2)SnI4) transistors when they are exposed sequentially to ambient and vacuum conditions. Exposure to ambient conditions induces p-doping effects that lead to a significant shift in the threshold voltage. Interestingly, we have found that the unintentionally p-doped (PEA)(2)SnI4 transistors can be fully restored by simply exposing them to vacuum, indicating a complete dedoping without any structural or operational degradation. Our first-principles calculations further support the observations by revealing that the doping by O-2 molecules occurs via occupying the interstitial sites that form acceptor levels close to the valence band maximum of (PEA)(2)SnI4.
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Related Researcher

  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Molecular doping in emerging semiconductors, Next-generation electronic devices, Transport phenomena in organic semiconductors


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